Module Manufacturer: G.Skill 
Module Part Number: F4-3600C16-8GTZR 
DRAM Manufacturer: Samsung 
DRAM Components: K4A8G085WB-BCPB 
DRAM Die Revision / Lithography Resolution: B / 20 nm 
Module Manufacturing Date: Undefined 
Module Manufacturing Location: Taipei, Taiwan 
Module Serial Number: 00000000h 
Module PCB Revision: 00h 
Physical & Logical Attributes Fundamental Memory Class: DDR4 SDRAM 
Module Speed Grade: DDR4-2133 
Base Module Type: UDIMM (133.35 mm) 
Module Capacity: 8192 MB 
Reference Raw Card: A1 (8 layers) 
Initial Raw Card Designer: SK hynix 
Module Nominal Height: 31 < H <= 32 mm 
Module Thickness Maximum, Front: 1 < T <= 2 mm 
Module Thickness Maximum, Back: 1 < T <= 2 mm 
Number of DIMM Ranks: 1 
Address Mapping from Edge Connector to DRAM: Standard 
DRAM Device Package: Standard Monolithic 
DRAM Device Package Type: 78-ball FBGA 
DRAM Device Die Count: Single die 
Signal Loading: Not specified 
Number of Column Addresses: 10 bits 
Number of Row Addresses: 16 bits 
Number of Bank Addresses: 2 bits (4 banks) 
Bank Group Addressing: 2 bits (4 groups) 
DRAM Device Width: 8 bits 
Programmed DRAM Density: 8 Gb 
Calculated DRAM Density: 8 Gb 
Number of DRAM components: 8 
DRAM Page Size: 1 KB 
Primary Memory Bus Width: 64 bits 
Memory Bus Width Extension: 0 bits 
DRAM Post Package Repair: Supported 
Soft Post Package Repair: Supported 
DRAM Timing Parameters Fine Timebase: 0.001 ns 
Medium Timebase: 0.125 ns 
CAS Latencies Supported: 10T, 11T, 12T, 13T, 
14T, 15T, 16T 
DRAM Minimum Cycle Time: 0.938 ns 
DRAM Maximum Cycle Time: 1.600 ns 
Nominal DRAM Clock Frequency: 1066.10 MHz 
Minimum DRAM Clock Frequency: 625.00 MHz 
CAS# Latency Time (tAA min): 13.750 ns 
RAS# to CAS# Delay Time (tRCD min): 13.750 ns 
Row Precharge Delay Time (tRP min): 13.750 ns 
Active to Precharge Delay Time (tRAS min): 33.000 ns 
Act to Act/Refresh Delay Time (tRC min): 46.750 ns 
Normal Refresh Recovery Delay Time (tRFC1 min): 350.000 ns 
2x mode Refresh Recovery Delay Time (tRFC2 min): 260.000 ns 
4x mode Refresh Recovery Delay Time (tRFC4 min): 160.000 ns 
Short Row Active to Row Active Delay (tRRD_S min): 3.700 ns 
Long Row Active to Row Active Delay (tRRD_L min): 5.300 ns 
Write Recovery Time (tWR min): 15.000 ns 
Short Write to Read Command Delay (tWTR_S min): 2.500 ns 
Long Write to Read Command Delay (tWTR_L min): 7.500 ns 
Long CAS to CAS Delay Time (tCCD_L min): 5.625 ns 
Four Active Windows Delay (tFAW min): 21.000 ns 
Maximum Active Window (tMAW): 8192*tREFI 
Maximum Activate Count (MAC): Unlimited MAC 
DRAM VDD 1.20 V operable/endurant: Yes/Yes 
Thermal Parameters Module Thermal Sensor: Not Incorporated 
Integrated Temperature Sensor Manufacturer: Giantec 
Model: GT34TS04 
Revision: 01h 
Temperature Monitor Status: Active 
Current Ambient Temperature: 42.000°C 
Sensor Resolution: 0.2500°C (10-bit ADC) 
Accuracy at 75°C to 95°C: ±1°C 
Accuracy at 40°C to 125°C: ±2°C 
Open-drain Event Output: Disabled 
10V of VHV on A0 pin: Supported 
Negative Temperature Measurements: Supported 
Interrupt capabilities: Supported 
SPD Protocol SPD Revision: 1.1 
SPD Bytes Total: 512 
SPD Bytes Used: 384 
SPD Checksum (Bytes 00h-7Dh): 242Dh (OK) 
SPD Checksum (Bytes 80h-FDh): A01Ch (OK) 
Part number details JEDEC DIMM Label: 8GB 1Rx8 PC4-2133-UA1-11 
Frequency CAS RCD RP RAS RC RRDS RRDL WR WTRS WTRL FAW 
1067 MHz 16 15 15 36 50 4 6 16 3 8 23 
1067 MHz 15 15 15 36 50 4 6 16 3 8 23 
933 MHz 14 13 13 31 44 4 5 14 3 7 20 
933 MHz 13 13 13 31 44 4 5 14 3 7 20 
800 MHz 12 11 11 27 38 3 5 12 2 6 17 
800 MHz 11 11 11 27 38 3 5 12 2 6 17 
667 MHz 10 10 10 22 32 3 4 10 2 5 14 
Intel Extreme Memory Profiles Profiles Revision: 2.0 
Profile 1 (Certified) Enables: Yes 
Profile 2 (Extreme) Enables: No 
Profile 1 Channel Config: 2 DIMM/channel 
XMP Parameter Profile 1 Profile 2 
Speed Grade: DDR4-3604 N/A 
DRAM Clock Frequency: 1802 MHz N/A 
Module VDD Voltage Level: 1.35 V N/A 
Minimum DRAM Cycle Time (tCK): 0.555 ns N/A 
CAS Latencies Supported: 16T N/A 
CAS Latency Time (tAA): 16T N/A 
RAS# to CAS# Delay Time (tRCD): 16T N/A 
Row Precharge Delay Time (tRP): 16T N/A 
Active to Precharge Delay Time (tRAS): 36T N/A 
Active to Active/Refresh Delay Time (tRC): 52T N/A 
Four Activate Window Delay Time (tFAW): 44T N/A 
Short Activate to Activate Delay Time (tRRD_S): 7T N/A 
Long Activate to Activate Delay Time (tRRD_L): 9T N/A 
Normal Refresh Recovery Delay Time (tRFC1): 631T N/A 
2x mode Refresh Recovery Delay Time (tRFC2): 469T N/A 
4x mode Refresh Recovery Delay Time (tRFC4): 289T N/A 
Show delays in nanoseconds