merhaba arkadaslar, elimde bir toshiba notebook var, cok yavas calisiyor, performansini artirmak istiyorum. RAM'i cok dusuk: 2x256MB. Sistemin anakart ve bellek ozelliklerini asagida veriyorum. Sizce bu notebook'u upgrade edebilmek icin anakartin kaldirabilecegi en yuksek performansli bellek hangisidir? Daha acikca sormak gerekirse sisteme 166 MHz de calisan PC2700 bellekler takilmis, anakartin destekledigi max clock rate tam olarak kactir? FSB'in realclock, effective clock degerleriyle belleginkiler arasinda nasil bir iliski olmalidir? tesekkurler,iyi bayramlar..
--------------------------------------------------------------------------------------------------- Anakart ozellikleri su sekilde: --------------------------------------------------------------------------------------------------- Motherboard Properties: Motherboard ID <DMI> Motherboard Name TOSHIBA Satellite L10
Front Side Bus Properties: Bus Type Intel NetBurst Bus Width 64-bit Real Clock 100 MHz (QDR) Effective Clock 400 MHz Bandwidth 3200 MB/s
Memory Bus Properties: Bus Type DDR SDRAM Bus Width 64-bit Real Clock 167 MHz (DDR) Effective Clock 333 MHz Bandwidth 2667 MB/s
Chipset Bus Properties: Bus Type Intel Hub Interface Bus Width 8-bit Real Clock 67 MHz (QDR) Effective Clock 267 MHz Bandwidth 267 MB/s
--------------------------------------------------------------------------------------------------- Uzerinde takili olan bellek ozellikleri ise: ---------------------------------------------------------------------------------------------------
[ DIMM1: Hyundai HYMD232M646D6-J ]
Memory Module Properties: Module Name Hyundai HYMD232M646D6-J Serial Number FFFF1097h Module Size 256 MB (2 ranks, 4 banks) Module Type Unbuffered Memory Type DDR SDRAM Memory Speed PC2700 (166 MHz) Module Width 64 bit Module Voltage SSTL 2.5 Error Detection Method None Refresh Rate Reduced (7.8 us), Self-Refresh
Memory Module Features: Early RAS# Precharge Not Supported Auto-Precharge Not Supported Precharge All Not Supported Write1/Read Burst Not Supported Buffered Address/Control Inputs Not Supported Registered Address/Control Inputs Not Supported On-Card PLL (Clock) Not Supported Buffered DQMB Inputs Not Supported Registered DQMB Inputs Not Supported Differential Clock Input Supported Redundant Row Address Not Supported
Memory Module Features: Early RAS# Precharge Supported Auto-Precharge Not Supported Precharge All Not Supported Write1/Read Burst Not Supported Buffered Address/Control Inputs Not Supported Registered Address/Control Inputs Not Supported On-Card PLL (Clock) Not Supported Buffered DQMB Inputs Not Supported Registered DQMB Inputs Not Supported Differential Clock Input Supported Redundant Row Address Not Supported
muhtemelen Intel 8xx serisi bir anakart. ram upgrade olmaz ona.. belki tek modül bulursan 512 MB lık 333 MHz frekansında çalışan tek modül takılabilir.
muhtemelen Intel 8xx serisi bir anakart. ram upgrade olmaz ona.. belki tek modül bulursan 512 MB lık 333 MHz frekansında çalışan tek modül takılabilir.
Evet, Intel 855 GME Chipset, ama neden upgrade olmuyor, onu anlamadim?? Iki slotta bulunan modulleri cikarip daha yuksek kapasiteli olanlari takamaz miyim?
elimde bir toshiba notebook var, cok yavas calisiyor, performansini
artirmak istiyorum. RAM'i cok dusuk: 2x256MB. Sistemin anakart ve
bellek ozelliklerini asagida veriyorum. Sizce bu notebook'u upgrade
edebilmek icin anakartin kaldirabilecegi en yuksek performansli
bellek hangisidir? Daha acikca sormak gerekirse sisteme 166 MHz
de calisan PC2700 bellekler takilmis, anakartin destekledigi max clock rate
tam olarak kactir? FSB'in realclock, effective clock degerleriyle
belleginkiler arasinda nasil bir iliski olmalidir?
tesekkurler,iyi bayramlar..
---------------------------------------------------------------------------------------------------
Anakart ozellikleri su sekilde:
---------------------------------------------------------------------------------------------------
Motherboard Properties:
Motherboard ID <DMI>
Motherboard Name TOSHIBA Satellite L10
Front Side Bus Properties:
Bus Type Intel NetBurst
Bus Width 64-bit
Real Clock 100 MHz (QDR)
Effective Clock 400 MHz
Bandwidth 3200 MB/s
Memory Bus Properties:
Bus Type DDR SDRAM
Bus Width 64-bit
Real Clock 167 MHz (DDR)
Effective Clock 333 MHz
Bandwidth 2667 MB/s
Chipset Bus Properties:
Bus Type Intel Hub Interface
Bus Width 8-bit
Real Clock 67 MHz (QDR)
Effective Clock 267 MHz
Bandwidth 267 MB/s
---------------------------------------------------------------------------------------------------
Uzerinde takili olan bellek ozellikleri ise:
---------------------------------------------------------------------------------------------------
[ DIMM1: Hyundai HYMD232M646D6-J ]
Memory Module Properties:
Module Name Hyundai HYMD232M646D6-J
Serial Number FFFF1097h
Module Size 256 MB (2 ranks, 4 banks)
Module Type Unbuffered
Memory Type DDR SDRAM
Memory Speed PC2700 (166 MHz)
Module Width 64 bit
Module Voltage SSTL 2.5
Error Detection Method None
Refresh Rate Reduced (7.8 us), Self-Refresh
Memory Timings:
@ 166 MHz 2.5-3-3-7 (CL-RCD-RP-RAS)
@ 133 MHz 2.0-3-3-6 (CL-RCD-RP-RAS)
Memory Module Features:
Early RAS# Precharge Not Supported
Auto-Precharge Not Supported
Precharge All Not Supported
Write1/Read Burst Not Supported
Buffered Address/Control Inputs Not Supported
Registered Address/Control Inputs Not Supported
On-Card PLL (Clock) Not Supported
Buffered DQMB Inputs Not Supported
Registered DQMB Inputs Not Supported
Differential Clock Input Supported
Redundant Row Address Not Supported
Memory Module Manufacturer:
Company Name Hynix Semiconductor Inc.
Product Information http://www.hynix.com/eng/02_products/01_dram/index.jsp
[ DIMM2: Infineon AED560SD00-600C88X ]
Memory Module Properties:
Module Name Infineon AED560SD00-600C88X
Serial Number 155802DDh
Manufacture Date Week 12 / 2006
Module Size 256 MB (2 ranks, 4 banks)
Module Type Unbuffered
Memory Type DDR SDRAM
Memory Speed PC2700 (166 MHz)
Module Width 64 bit
Module Voltage SSTL 2.5
Error Detection Method None
Refresh Rate Reduced (7.8 us), Self-Refresh
Memory Timings:
@ 166 MHz 2.5-3-3-7 (CL-RCD-RP-RAS)
@ 133 MHz 2.0-3-3-6 (CL-RCD-RP-RAS)
Memory Module Features:
Early RAS# Precharge Supported
Auto-Precharge Not Supported
Precharge All Not Supported
Write1/Read Burst Not Supported
Buffered Address/Control Inputs Not Supported
Registered Address/Control Inputs Not Supported
On-Card PLL (Clock) Not Supported
Buffered DQMB Inputs Not Supported
Registered DQMB Inputs Not Supported
Differential Clock Input Supported
Redundant Row Address Not Supported
Memory Module Manufacturer:
Company Name Infineon Technologies AG
Product Information http://www.infineon.com/cgi-bin/ifx/portal/ep/home.do?tabId=1
DH forumlarında vakit geçirmekten keyif alıyor gibisin ancak giriş yapmadığını görüyoruz.
Üye Ol Şimdi DeğilÜye olduğunda özel mesaj gönderebilir, beğendiğin konuları favorilerine ekleyip takibe alabilir ve daha önce gezdiğin konulara hızlıca erişebilirsin.